Oval high brightness light emitting diodes Szie 3.93.0mm Elliptical Wide Angle DL-434UYDA-3UY-T manufacturer from China HongKong Double Light Electronics Technology Co. Ltd

Oval high brightness light emitting diodes Szie 3.93.0mm Elliptical Wide Angle

Place of Origin:

Zhejiang, China (Mainland)


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Product Detail

Model No.: DL-434UYDA-3UY-T

Oval high brightness light emitting diodes Szie 3.9×3.0mm Elliptical Wide Angle

Oval LED Light Emitting Diod

Oval high brightness light emitting diodes Szie 3.9×3.0mm Elliptical Wide Angle

Oval LED Light Emitting Diode

Features:

High luminous intensity output.
Oval shape.
Well defined spatial radiation.
Wide viewing angle (2θ_1/2): 100^o/50^o.
Reliable and robust.
The product itself will remain within RoHS complaint Version.

Applications:

This precision optical performance oval LED is specially designed for passenger information signs.
The LED lamps are available with different colors, intensities.
Superior performance in outdoor environment.

Descriptions:

Single or dual color graphic signs.
Message boards.
Variable message signs(VMS).
Commercial outdoor advertising.

Part No.	Chip Material	Lens Color	Source Color
DL-434UYDA-3UY-T	AlInGaP	Yellow Diffused	Ultra Yellow

Oval LED Light Emitting Diode Absolute Maximum Ratings at Ta=25

	Symbol	Max.	Unit
Power Dissipation	PD	65	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	100	mA
Forward Current	IF	25	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-40 to +80
Storage Temperature Range	Tstg	-40 to +85
Lead Soldering Temperature [4mm (.157″) From Body]	Tsld	260 for 5 Seconds

Electrical Optical Characteristics at Ta=25

Parameters	Symbol		Min.	Typ.	Max.	Unit	Test Condition
Luminous Intensity *	IV		600	780	---	mcd	IF=20mA (Note 1)
Viewing Angle *	2θ_1/2	X	---	100	---	Deg	IF=20mA (Note 2)
Viewing Angle *	2θ_1/2	Y	---	50	---	Deg	IF=20mA (Note 2)
Peak Emission Wavelength	λp		---	592	---	nm	IF=20mA
Dominant Wavelength	λd		---	589	---	nm	IF=20mA (Note 3)
Spectrum Radiation Bandwidth	Δλ		---	15	---	nm	IF=20mA
Forward Voltage	VF		1.6	2.2	2.6	V	IF=20mA
Reverse Current	IR		---	---	10	µA	V_R=5V

Notes:

Luminous Intensity Measurement allowance is ± 10%.
θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
The dominant wavelength (λd) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

Notes:

Luminous Intensity Measurement allowance is ± 10%. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λd) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

Package Dimension: