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You are here: home  > Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm

Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm 

Place of Origin: Zhejiang, China (Mainland) 
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Product Detail

Model No.: DL-HP20SIRA-1SIR120

Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm
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Epileds Chip Infrared Emitting Diode 1w 3w high power light emitting diode 730nm 850nm 940nm

 

High Power Infrared Emitting Diode 

  1. Features:
    1. Very long operating life (up to 100k hours).
    2. Available in white, green, blue, red, yellow.
    3. More energy efficient than incandescent and most halogen lamps.
    4. Low voltage DC operated.
    5. Cool beam, safe to the touch.
    6. Instant light (less than 100 ns).
    7. The product itself will remain within RoHS compliant Version.

    Applications:
    1. Reading lights (car, bus, aircraft).
    2. Portable (flashlight, bicycle).
    3. Mini_accent/Uplighters/Downlighters/Orientation.
    4. Bollards/Security/Garden.
    5. Cove/Undershelf/Task.
    6. Automotive rear combination lamps.
    7. Traffic signaling/Beacons/ Rail crossing and Wayside.
    8. Indoor/Outdoor Commercial and Residential Architectural.
    9. Edge_lit signs (Exit, point of sale).
    10. LCD Backlights/Light Guides.

 

 

  1. Absolute Maximum Ratings at Ta=25
  2. Parameters Symbol Rating Units
    Forward Current IF 500 mA
    Peak Pulse Current (tp≤100μs, Duty cycle=0.25) I pulse 700 mA
    Reverse Voltage VR 5 V
    LED Junction Temperature Tj 125
    Operating Temperature Range Topr -40 to +80
    Storage Temperature Range Tstg -40 to +100
    Soldering Time at 260 (Max.) Tsol 5 Seconds
     

    Notes:

  3. Proper current derating must be observed to maintain junction temperature below the maximum.
  4. LEDs are not designed to be driven in reserve bias.
  5.  

    Electrical Optical Characteristics at Ta=25

    Parameters Symbol Min. Typ. Max. Unit Test Condition
    Viewing Angle [1] 1/2 --- 120 -- Deg IF=350mA
    Forward Voltage [2] VF 1.6 --- 2.2 V IF=350mA
    Reverse Current IR --- --- 10 µA VR=5V
    Peak Emission Wavelength λp --- 730 --- nm IF=350mA
    Dominant Wavelength λd ---- 730 ---- nm IF =350mA
    Spectrum Radiation Bandwidth Δλ --- 10 --- nm IF=350mA
    Power Intensity Pv 160 --- 240 mw IF=350mA
     

    Notes:

  6. 2θ1/2 is the off axis angle from lamp centerline where the luminous intensity is 1/2 of the peak value.
  7. Forward Voltage measurement tolerance : ±0.1V
  8.  

     

    Notes:

    1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

    2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

 

Infrared Emitting Diode Package Dimension:

 

 
 
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 Mr. Mr. Rony Qiu

Tel: 86-755-82853859
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Company Info

HongKong Double Light Electronics Technology Co. Ltd [China (Mainland)]


Business Type:Manufacturer
City: Shenzhen
Province/State: Guangdong
Country/Region: China (Mainland)

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