HongKong Double Light Electronics Technology Co. Ltd
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Gold Index: 9163
Place of Origin: | Zhejiang, China (Mainland) |
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LED Electronics 5mm Wavelength 940nm IR Led Emitter / Infrared Phototransistor
5mm LED Phototransistor
Parameters | Symbol | Rating | Unit |
Power Dissipation | PD | 75 | mW |
Collector-Emitter Voltage | VCEO | 30 | V |
Emitter-Collector-Voltage | VECO | 5 | V |
Collector Current | IC | 20 | mA |
Operating Temperature | TOPR | -40 to +85 | |
Storage Temperature | TSTG | -40 to +100 | |
Lead Soldering Temperature | TSOL | 260 |
Electrical Optical Characteristics at Ta=25
Parameters | Symbol | Min. | Typ. | Max. | Unit | Condition |
Collector-Emitter Breakdown Voltage | BVCEO | 30 | --- | --- | V |
IC=100μA, Ee=0mW/cm² |
Emitter-Collector Breakdown Voltage | BVECO | 5 | --- | --- | V |
IE=100μA, Ee=0mW/cm² |
Collector-Emitter Saturation Voltage | VCE(SAT) | --- | --- | 0.40 | V |
IC=0.70mA, Ee=1mW/cm2 |
Collector Dark Current | ICEO | --- | --- | 100 | nA |
Ee=0mW/cm², VCE=20V |
On-State Collector Current | IC(ON) | 0.70 | 2.00 | --- | mA |
Ee=1mW/cm², VCE=5V |
Optical Rise Time (10% to 90%) | TR | --- | 15 | --- | μs |
VCE=5V, IC=1mA, RL=1000Ω |
Optical Fall Time (90% to 10%) | TF | --- | 15 | --- | ||
Reception Angle | 2θ1/2 | --- | 10 | --- | Deg | |
Wavelength Of Peak Sensitivity | λP | --- | 940 | --- | nm | |
Rang Of Spectral Bandwidth | λ0.5 | 700 | --- | 1200 | nm |
Infrared Emitting Diode Package Dimension:
HongKong Double Light Electronics Technology Co. Ltd [China (Mainland)]
Business Type:Manufacturer
City: Shenzhen
Province/State: Guangdong
Country/Region: China (Mainland)