GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode DL-PCB0805IRCA-1IR120 manufacturer from China HongKong Double Light Electronics Technology Co. Ltd

GaAs Chip Material Infrared Emitting Diode 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

Place of Origin:

Zhejiang, China (Mainland)


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Product Detail

Model No.: DL-PCB0805IRCA-1IR120

GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode
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GaAs Chip Material 120 Degree 0.06 Watt 850nm ir led chip 0850 SMD light emitting diode

SMD Infrared Emitting Diode

Features:

Package in 8mm tape on 7" diameter reel.
Compatible with automatic placement equipment.
Compatible with infrared and vapor phase reflow solder process.
Mono-color type.
The product itself will remain within RoHS compliant Version.

Descriptions:

The 0805IR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
The device is spectrally matched with photodiode and phototransistor.

Applications:

PCB mounted infrared sensor.
Infrared emitting for miniature light barrier.
Floppy disk drive.
Optoelectronic switch.
Smoke detector.

Absolute Maximum Ratings at Ta=25

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity *	Ee	0.20	0.35	---	mW/sr	IF=20mA
Radiant Intensity *	Ee	---	2.50	---	mW/sr	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Viewing Angle *	2θ 1/2	---	140	---	Deg	IF=20mA (Note 2)
Peak Emission Wavelength	λp	---	940	---	nm	IF=20mA (Note 3)
Spectral Bandwidth	λ	---	50	---	nm	IF=20mA
Forward Voltage	VF	0.80	1.20	1.50	V	IF=20mA
Forward Voltage	VF	---	1.60	1.80	V	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Reverse Current	IR	---	---	10	µA	V_R=5V

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	100	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	50	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-40 to +80
Storage Temperature Range	Tstg	-40 to +100
Lead Soldering Temperature	Tsld	260 for 5 Seconds