0.80mm Height 0603 Package Infrared Chip LED high power ir led 850nm 120Deg DL-PCB0603SIRCA-1SIR120 manufacturer from China HongKong Double Light Electronics Technology Co. Ltd

0.80mm Height 0603 Package Infrared Chip LED high power ir led 850nm 120Deg

Place of Origin:

Zhejiang, China (Mainland)


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Product Detail

Model No.: DL-PCB0603SIRCA-1SIR120

0.80mm Height 0603 Package Infrared Chip LED high power ir led 850nm 120Deg
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0.80mm Height 0603 Package Infrared Chip LED high power ir led 850nm 120Deg

0603 Infrared Emitting Diode

Features:

Package in 8mm tape on 7" diameter reel.
Compatible with automatic placement equipment.
Compatible with infrared and vapor phase reflow solder process.
Mono-color type.
The product itself will remain within RoHS compliant Version.

Descriptions:

The 0603 IR is an infrared emitting diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.
The device is spectrally matched with photodiode and phototransistor.

Applications:

PCB mounted infrared sensor.
Infrared emitting for miniature light barrier.
Floppy disk drive.
Optoelectronic switch.
Smoke detector.
Instant light (less than 100ns)
Lead free reflow soldering
RoHS compliant
Cool beam, safe to the touch
Superior ESD protection

Main Applications
CCTV
Wireless communication
Indoor Lighting
Outdoor Lighting

Absolute Maximum Ratings at Ta=25

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	95	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	500	mA
Forward Current	IF	50	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-40 to +80
Storage Temperature Range	Tstg	-40 to +100
Lead Soldering Temperature	Tsld	260 for 5 Seconds

Electrical Optical Characteristics at Ta=25

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity *	Ee	0.35	0.45	---	mW/sr	IF=20mA
Viewing Angle *	2θ 1/2	---	140	---	Deg	IF=20mA (Note 2)
Peak Emission Wavelength	λp	---	880	---	nm	IF=20mA (Note 3)
Spectral Bandwidth	λ	---	45	---	nm	IF=20mA
Forward Voltage	VF	---	1.40	1.90	V	IF=20mA
Reverse Current	IR	---	---	10	µA	V_R=5V

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

0603 Infrared Emitting Diode Package Dimension: