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You are here: home  > SMD 3528 Infrared Chip LED 940nm Infrared Emitting Diode Radiant Intensity 7.0mW/sr

SMD 3528 Infrared Chip LED 940nm Infrared Emitting Diode Radiant Intensity 7.0mW/sr 

Place of Origin: Zhejiang, China (Mainland) 
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Product Detail

Model No.: DL-TOP3528IRC-2IR120

SMD 3528 Height Top View Infrared Chip LED 940nm Infrared Emitting Diode Radiant Intensity 7.0mW/sr
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SMD 3528 Height Top View Infrared Chip LED 940nm Infrared Emitting Diode Radiant Intensity 7.0mW/sr

 

3528 Infrared Emitting Diode 
 

  1. Features:
  1. PCB mounted infrared sensor.
  2. Infrared emitting for miniature light barrier.
  3. Floppy disk drive.
  4. Optoelectronic switch.
  5. Smoke detector.
  6. Camera.
  7. VCR.
  8. Video.
  9.  

  10. Applications:
  11. The 3528 is an infrared emitting diode in miniature SMD package which is molded in a water clear epoxy with flat top view lens.
  12. The device is specially matched with photodiode, phototransistor and infrared receiver module.
  13.  

  14. Descriptions:
  15. Package in 8mm tape on 7” diameter reel.
  16. P-LCC-2 package.
  17. White package.
  18. Optical indicator.
  19. Colorless clear window.
  20. Low forward voltage.
  21. Wide viewing angle.
  22. Suitable for automatic placement equipment.
  23. Suitable for vapor-phase reflow, infrared reflow solder processes.
  24. The product itself will remain within RoHS compliant Version.

 

 

  1. Absolute Maximum Ratings at Ta=25
Parameters Symbol Max. Unit
Power Dissipation PD 130 mW

Peak Forward Current

(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 1.00 A
Continuous Forward Current IF 65 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -25 to +80
Storage Temperature Range Tstg -40 to +85
Soldering Temperature Tsld 260 for 5 Seconds
 

 

Electrical Optical Characteristics at Ta=25

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity * Ee 1.00 1.50 --- mW/sr IF=20mA
--- 7.00 ---

IF=100mA

(Pulse Width≤100µs, Duty≤1%)

Viewing Angle * 2θ 1/2 --- 120 --- Deg IF=20mA (Note 2)
Peak Emission Wavelength λp --- 940 --- nm IF=20mA (Note 3)
Spectral Bandwidth λ --- 45 --- nm IF=20mA
Forward Voltage VF 0.80 1.20 1.50 V IF=20mA
--- 1.40 1.80

IF=100mA

(Pulse Width≤100µs, Duty≤1%)

Reverse Current IR --- --- 10 µA VR=5V
 

 

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

 

Infrared Emitting Diode Package Dimension:

 

 
 
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 Mr. Mr. Rony Qiu

Tel: 86-755-82853859
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Company Info

HongKong Double Light Electronics Technology Co. Ltd [China (Mainland)]


Business Type:Manufacturer
City: Shenzhen
Province/State: Guangdong
Country/Region: China (Mainland)

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