1.80mm Round Subminiature Axial ir led chip Emission Wavelength 850nm

Subminiature Axial Infrared Emitting Diode 

1. Package in 12mm tape on 7" diameter reels.
   Small double-end package.
   EIA Std. package.
   High reliability.
   Low forward voltage.
   Compatible with automatic placement equipment.
   The product itself will remain within RoHS compliant version.
   The device is an infrared emitting diode in miniature SMD package which is molded in water clear plastic.
   The device is much smaller than leaded components. Thus enable smaller board size. Higher packing density. Reduced storage space and finally smaller equipment to be obtained.
   The device is specially matched with photodiode, phototransistor and infrared receiver module.
   PCB mounted infrared sensor.
   Infrared emitting for miniature light barrier.
   Floppy disk drive.
   Optoelectronic switch.
   Smoke detector.

1. Absolute Maximum Ratings at Ta=25

   Parameters	Symbol	Max.	Unit
   Power Dissipation	PD	100	mW
   Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
   Continuous Forward Current	IF	50	mA
   Reverse Voltage	VR	5	V
   Operating Temperature Range	Topr	-40 to +80
   Storage Temperature Range	Tstg	-40 to +85
   Soldering Temperature	Tsld	260 for 5 Seconds

    

   Electrical Optical Characteristics at Ta=25

   Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
   Radiant Intensity (Note 1) *	Ee	---	2.70	---	mW/sr	IF=20mA
   Viewing Angle (Note 2) *	2θ1/2	---	25	---	Deg	IF=20mA
   Peak Emission Wavelength	λp	---	850	---	nm	IF=20mA
   Spectral Bandwidth	λ	---	45	---	nm	IF=20mA
   Forward Voltage	VF	---	1.40	1.90	V	IF=20mA
   Reverse Current	IR	---	---	10	µA	VR=5V

    

    

   Notes:

   1. Luminous Radiant is measured with a light sensor and filter combination that approximates the CIE eye-response curve.

   2. θ_1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.