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GaAlAs 5mm Round With Flange Infrared Emitting Diode Peak Emission Wavelength 850nm 

Place of Origin: Zhejiang, China (Mainland) 
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Product Detail

Model No.: DL-503SIRCA-2SIR50

GaAlAs 5mm Round With Flange Infrared Emitting Diode Peak Emission Wavelength 850nm
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GaAlAs 5mm Round With Flange Infrared Emitting Diode Peak Emission Wavelength 850nm

 

5mm Infrared Emitting Diode 940nm 

 
Features:
Fast response time
High photo sensitivity
Small junction capacitance
Pb free
This product itself will remain within RoHS compliant version.

Product details:
Chip material: Silicon
Lens color: black
Reverse voltage: 32V
Open-circuit voltage: 0.39V
Short-circuit current: 35μA
Reverse light current: 35
View angle: 80°

 

Description:

  1. High reliability
  2. High radiant intensity
  3. Peak wavelength λp=940nm
  4. 2.54mm Lead spacing
  5. Low forward voltage
  6. Pb free
  7. The product itself will remain within RoHS compliant version.

5MM infrared led Features:
 
General purpose leads.
2. High efficiency.
3. High intensity.
4. Low power consumption.
5. RoHS compliant.
6. Size from 3mm to 10mm
7. Standard and Super ightness
8. Various Shape and Head Style
9. Wide Operating Temperature Range
10. Wide Range of Color Selection
 
5MM infrared led Applications :
1. Phtographing equipment
2. surveillance cameras
3. remote controller
4. other special applications

 

 

  1. Absolute Maximum Ratings at Ta=25
Parameters Symbol Max. Unit
Power Dissipation PD 100 mW

Peak Forward Current
(1/10 Duty Cycle, 0.1ms Pulse Width)

IFP 1.00 A
Forward Current IF 50 mA
Reverse Voltage VR 5 V
Operating Temperature Range Topr -40 to +80
Storage Temperature Range Tstg -40 to +85
Soldering Temperature Tsld 260 for 5 Seconds
 

 
Electrical Optical Characteristics at Ta=25

Parameters Symbol Min. Typ. Max. Unit Test Condition
Radiant Intensity (Note 1) * Ee 20.0 25.0 --- mW/sr IF=20mA
--- 50.0 --- IF=50mA, tp=100µs, tp/T=0.01
Viewing Angle (Note 2) * 2θ1/2 --- 45 --- Deg IF=20mA
Peak Emission Wavelength λp --- 940 --- nm IF=20mA (Note 3)
Spectral Bandwidth λ --- 50 --- nm IF=20mA
Forward Voltage VF 0.80 1.20 1.50 V IF=20mA
--- 1.50 1.60 IF=50mA, tp=100µs, tp/T=0.01
Reverse Current IR --- --- 10 µA VR=5V
 
 
Infrared Emitting Diode Package Dimension:

bigPhoto
 Mr. Mr. Rony Qiu

Tel: 86-755-82853859
Contact to this supplier

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Company Info

HongKong Double Light Electronics Technology Co. Ltd [China (Mainland)]


Business Type:Manufacturer
City: Shenzhen
Province/State: Guangdong
Country/Region: China (Mainland)

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