Infrared led light emitting diode 3 Chips in One 0.2W SMD 5050 IR LED 940nm DL-TOP5050IRC-2IR120 manufacturer from China HongKong Double Light Electronics Technology Co. Ltd

Infrared led light emitting diode 3 Chips in One 0.2W SMD 5050 IR LED 940nm

Place of Origin:

Zhejiang, China (Mainland)


	Add to My Favorites
HiSupplier Escrow	Share \|

Product Detail

Model No.: DL-TOP5050IRC-2IR120

Infrared led light emitting diode 3 Chips in One 0.2W SMD 5050 IR LED 940nm
<

Infrared led light emitting diode 3 Chips in One 0.2W SMD 5050 IR LED 940nm

SMD 5050 Infrared Emitting Diode

Applications:
The TOP5050 is available in soft red, orange, yellow, green, blue and white. Due to the Package design, the LED has wide viewing angle and optimized light coupling by inter reflector, this feature makes the SMT TOP LED ideal for light pipe Application. The low current requirement makes this device ideal for portable equipment or any other application where power is at a premium.
Descriptions:
P-LCC-6 package.
White package.
Optical indicator.
Colorless clear window.
Ideal for backlight and light pipe application.
Inter reflector.
Wide viewing angle.
Suitable for vapor-phase reflow, infrared reflow and wave solder processes.
Suitable for all SMT assembly and solder process.
Computable with automatic placement equipment.
Available on tape and reel (12mm Tape).
The product itself will remain within RoHS compliant Version.
Descriptions:
Package in 8mm tape on 7” diameter reel.
P-LCC-6 package.
White package.
Optical indicator.
Colorless clear window.
Low forward voltage.
Wide viewing angle.
Suitable for automatic placement equipment.
Suitable for vapor-phase reflow, infrared reflow solder processes.
The product itself will remain within RoHS compliant Version.

Absolute Maximum Ratings at Ta=25

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	130	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Continuous Forward Current	IF	65	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-25 to +80
Storage Temperature Range	Tstg	-40 to +85
Soldering Temperature	Tsld	260 for 5 Seconds

Electrical Optical Characteristics at Ta=25

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity *	Ee	1.00	1.50	---	mW/sr	IF=20mA
Radiant Intensity *	Ee	---	7.00	---	mW/sr	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Viewing Angle *	2θ 1/2	---	120	---	Deg	IF=20mA (Note 2)
Peak Emission Wavelength	λp	---	940	---	nm	IF=20mA (Note 3)
Spectral Bandwidth	λ	---	45	---	nm	IF=20mA
Forward Voltage	VF	0.80	1.20	1.50	V	IF=20mA
Forward Voltage	VF	---	1.40	1.80	V	IF=100mA (Pulse Width≤100µs, Duty≤1%)
Reverse Current	IR	---	---	10	µA	V_R=5V

Notes:

Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ_1/2is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

Infrared Emitting Diode Package Dimension: